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CXA3541N 2-channel read/write amplifier for gmr-ind head hard disk drive description the CXA3541N is a read/write amplifier for gmr-ind (giant magneto resistive-inductive) heads used in hard disk drives, and is capable of supporting up to two channels. features +5v and ?v power supply current bias voltage sense type low power 180mw at read differential read amplifier gain; 100/135 (r mr = 50 ? ) input noise of 0.77nv/ hz (typ.), r mr = 50 ? , i b = 5.9ma recovery time write to read; 300ns (typ.) write data is triggered by differential p-ecl signal servo bank write write unsafe detection circuit serial port head selection mr bias write current applications hard disk drives with gmr-ind heads structure bipolar silicon monolithic ic absolute maximum ratings (ta = 25?) supply voltage v cc ?.3 to +5.8 v supply voltage v ee ?.7 to +0.3 v digital input voltage vdi ?.3 to v cc + 0.3 v operating temperature topr 0 to +70 ? storage temperature tstg ?5 to +150 ? allowable power dissipation p d 800 mw (on board) operating conditions supply voltage v cc 4.4 to 5.5 v v ee ?.5 to ?.6 v mr bias voltage v mr ?00 to +300 mv bias current i b 3 to 8 ma write current i w 19.5 to 49.5 ma ?1 e00205a1z-ps sony reserves the right to change products and specifications without prior notice. this information does not convey any licens e by any implication or otherwise under any patents or other right. application circuits shown, if any, are typical examples illustr ating the operation of the devices. sony cannot assume responsibility for any problems arising out of the use of these circuits. 24 pin ssop (plastic)
?2 CXA3541N block diagram and pin configuration rdx flt/se/bhv r/xw sden v ee rdy gnd sclk sdata 5 wdy wdx v cc r0y r0x w0y w0x w1y w1x r1x r1y driver driver amp 15 nc 14 cap 13 16 17 18 19 20 21 22 nc 23 rs 24 amp amp bias current source write current source serial interface wd buf 12 11 10 9 8 7 6 2 1 3 4
3 CXA3541N pin description pin no. symbol equivalent circuit description 5 3 4 v cc wdx wdy 5v power supply. differential p-ecl write data input. 3 4 v cc v ee 100 100 gnd 1 2 11 sclk sdata sden serial control signal input. 2 11 1 v cc v ee 7.5k 14k gnd 2vf 7 8 rdy rdx read amplifier output with coupling capacitors. high impedance in the write mode. 7 8 v cc v ee 100 1.8ma gnd 6 gnd ground. 9 flt/se/bhv head unsafe detection output. servo bank write enable input. buffered head voltage output. 9 v cc v ee gnd
4 CXA3541N pin no. symbol equivalent circuit description 10 r/xw read/write control signal input. read when high, write when low. 10 v cc v ee gnd 3vf 13 cap connect an external capacitor of read amplifier between this pin and v ee . 13 v cc v ee 12 v ee 3v power supply. 14 23 nc non connection. 16 15 21 22 r0x r0y r1x r1y mr heads for read. two channels are provided. 21 22 16 15 v cc v ee 18 17 19 20 w0x w0y w1x w1y inductive heads for write. two channels are provided. 19 20 18 17 v cc v ee gnd
5 CXA3541N pin no. symbol equivalent circuit description 24 rs bias current setting register is connected between this pin and gnd. 24 v cc v ee 250 gnd vbgr = 1.3v
6 CXA3541N 6 electrical characteristics (unless otherwise specified; v cc = 5v, v ee = 3v, ta = 25 c, cap = 0.1f, rs = 7.5k ? ) no. item symbol measurement conditions min. typ. max. unit 1-1 1-2 1-3 1-4 1-5 1-7 1-8 1-9 2-1 2-2 2-3 2-4 2-5 2-6 3-1 3-2 3-3 3-4 4-1 4-2 5-1 5-2 6 v cc power supply current v ee power supply current bank write mode ttl input low input voltage ttl input high input voltage ttl input input current serial interface input low input voltage serial interface input high input voltage serial interface input input current p-ecl common voltage p-ecl differential voltage p-ecl high voltage p-ecl input current bank write enable voltage bank write enable current flt output low voltage flt output high voltage bhv gain accuracy i sp1 i id1 i re1 i wr1 i id2 i re2 i wr2 i ccbw v il v ih i ttl v sil v sih v st v pc v pd v ph i wd v seh i seh v fltl v flth e bhv sleep mode idle mode read mode write mode idle mode read mode write mode i ccbw = 17 + 17 n + i w n i w = 29.5ma ttl input; r/xw internal pull-up resistor high voltage: 5v low voltage: 0v serial input; sdata, sclk, sden high voltage: 3.3v low voltage: 0v pull-down resistor: 14k ? (v h + v l )/2 (v h v l ) input voltage: 4v open collector output external resistance = 2.4k ? open collector output external resistance = 2.4k ? v bhv = v cc 4 i b (r mr + 5.5 ? ) i b = "111", r mr = 50 ? 0 2.0 200 2.35 500 1.55 0.2 20 v cc + 1.2 6 4.5 8 2.15 22 37 98 10 10 10 111 2.85 29 48 130 13 13 13 0.8 v cc + 0.3 200 0.8 500 v cc 1.5 v cc 20 v cc + 1.4 14 0.8 8 ma ma ma ma ma ma ma ma v v a v v a v v v a v ma v v % power dissipation i w = 29.5ma, i b = 5.9ma digital inputs power dissipation i w = 29.5ma, i b = 5.9ma
7 CXA3541N no. item symbol measurement conditions min. typ. max. unit r1 r2 r3 r4 r5 r6 r7 r8 r9-1 r9-2 r10-1 r10-2 r11 r12 r13 p1 p2 w1 w2 w3 w4 w6 w7 w8 w9 w10 low gain high gain low frequency cut-off ( 3db) high frequency cut-off ( 3db) input reflected noise mr bias current range 1 mr bias accuracy mr bias resolution v cc power supply rejection ratio v ee power supply rejection ratio common mode rejection ratio 1 common mode rejection ratio 2 control line input noise rejection rdx/rdy offset difference magnitude rdx/rdy output impedance mr head open threshold mr head short threshold write current range write current accuracy write current resolution leakage current damping resistor write current propagation delay time write current rise/fall time erase current accuracy bank write current accuracy a vl a vh f cl f ch e ni i br1 e ib r ib psrr1 psrr2 cmrr1 cmrr2 clrr v off1 rdro mrop mrsh i wr e iw r iw i leak r d tpd t r /t f e ie gain = 0 r mr = 50 ? , i b = 5.9ma gain = 1 r mr = 50 ? , i b = 5.9ma exclusive of head noise r mr = 50 ? , i b = 5.9ma 3-bit dac ripple voltage: 100mvp-p 100khz to 50mhz ripple voltage: 100mvp-p 100khz to 10mhz ripple voltage: 100mvp-p 100khz to 50mhz ripple voltage: 100mvp-p 51mhz to 80mhz ripple voltage: 100mvp-p 4mhz to 80mhz write to read differential, read mode head x head y head x head y i b = "000" to "011" dac code = x "0000" to x "1111" r h = 0 ? 4-bit dac unselected head l h = 0, r h = 0 write data to 50% of write current r h = 15 ? , l h = 150nh, i w = 25ma v cc = 3.5v dac code = x "0101" refer to fig. 82 110 140 3 7 38 45 37 27 40 30 600 15 19.5 7 800 18 100 135 350 200 0.77 0.714 750 50 2 1000 1.9 9 118 160 550 0.95 8 +7 50 100 900 90 49.5 +7 200 1200 10 0 v/v v/v khz mhz nv hz ma % ma db db db db db mv ? mv mv ma % ma a ? ns ns % read safety characteristics write characteristics read characteristics r mr = 50 ? , i b = 5.9ma
8 CXA3541N no. item symbol measurement conditions min. typ. max. unit u1 u2 u3 u4 u5 u6 u7 s1 s2 s3 s4 s5 s6 s7 b1 b2 b4 b5 b6 b7 b8 write head open threshold head voltage when short to gnd wd frequency too low write safety detect time low v cc threshold low v cc threshold low v cc threshold hysteresis write to read read to write idle to read sleep to read read to bank write bank write to read idle to bank write idle to write setup time hold time sclk frequency sclk pulse width sclk sdata setup time sclk sdata hold time sden low time rop v g f wdl tws v wthl v wthh vhys t wr t rw t ir t sr1 t rb t br t iw t su (sden) th (sden) f (sclk) tw (sclk) t su (d) th (d) t sl detect open head detect short to gnd t1: 2 transitions on wdx/wdy fault detected fault removed signal on wdx/wdy 90% rd signal or 10% i w 90% i w 90% rd signal 90% rd signal, 90% i b ? 1 i b = "011" 90% i w 10% i w 90% i w sden to first sclk last sclk to deassert sden 0.5 3.7 3.9 30 15 10 10 10 100 1.2 3.9 4.1 200 300 50 600 1.4 0.1 1.8 300 + t1 4.1 4.3 500 70 1.0 2000 100 100 300 30 v v mhz ns v v mv ns ns s s ns ns s ns ns mhz ns ns ns ns switching characteristics iw = 29.5ma, i b = 5.9ma bank write characteristics iw = 29.5ma, i b = 5.9ma serial port timing write safety characteristics ? 1 t sr is proportional to i b and external cap value.
9 CXA3541N serial port characteristics adr1 0 0 1 adr0 0 1 0 data5 xslp gain mropn data4 xidl bhv mrsht data3 n/a n/a iw3 data2 n/a ib2 iw2 data1 n/a ib1 iw1 data0 hs ib0 iw0 ? ib[2:0] bits are initialized by "0" at power on. code description bit function xslp xidl hs gain bhv ib[2:0] mropn mrsht iw[3:0] 0 = set the pre-amplifier into low power "sleep" mode. 0 = set pre-amplifier to idle mode. head select bit. set the pre-amplifier to high or low gain mode. 1 = set pre-amplifier to high gain mode. active the bhv test point pin. "1" active. mr bias current set. 1 = set mr head open detector active. 1 = set mr head short detector active. set write current.
10 CXA3541N mode control sleep xslp = 0 idle xslp = 1 xidl = 0 r/xw = x write xslp = 1 xidl = 1 r/xw = l read xslp = 1 xidl = 1 r/xw = h serial port timing detail f (sclk) tw (sclk) th (d) tsu (d) sdata sclk sden a1 a0 d5 d4 d3 d2 d1 d0 th (sden) t sl tsu (sden) serial port timing after the sden goes high, the last eight bits are transferred into the register. the sclk will shift the data presented at sdata into an internal shift register on the rising edge of each clock. as sclk initial condition, both of low and high signal is acceptable.
11 CXA3541N unsafe condition 1. write fault condition flt is a high level in write fault condition. ? open write head leads. f wd < 15mhz ? write head leads shorted to ground. ? wd frequency is too low. ? power supply is out of tolerance. 2. read fault condition flt is a low level in read fault condition. ? open short mr head. (this function is set by serial resister.) bank write control (refer to bank "write current vs. current accuracy" characteristic curve) 1. set the read mode. 2. force a certain voltage (min. v cc + 1.2v) to flt/se pin by using the pull-up register. (r se = 820 ? ) #this operation disables all fault detection. 3. set v cc at 3.5v (in case of the erase mode only) 4. start the write operation by setting r/xw = l. 5. terminate the write operation by setting r/xw = h. i) allow 50% write duty or less. ii) low voltage detector is disabled in the bank write mode and erase mode. iii) don't change the serial register data bits in following conditions: ? v cc = 3.5v ? on entering write data. bhv (buffered head voltage) 1. applicable within v cc = 5v 5%. 2. turn bhv on, but turn off mropn and mrsht. 3. v bhv is determined by basis of v cc . v bhv = v cc (4 i b (r mr + 5.5 ? )) head condition 1. short x-y terminal on un-used write head. 2. recommended x-y terminal on un-used read head short. polarity 1. read output signal on rdx is negative, when mrx is positive by increasing r mr . 2. write current flows into x side, when wdx is high and wdy is low. head select table (2ch) hs 0 1 normal operation 0 1
12 CXA3541N mr bias ib2 ib1 ib0 i b [ma] 0 0 0 0 1 1 1 1 0 0 1 1 0 0 1 1 0 1 0 1 0 1 0 1 3.0 3.714 4.429 5.143 5.857 6.571 7.286 8.0 write current iw3 iw2 iw1 write current [ma 0-p ] 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 iw0 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 19.5 21.5 23.5 25.5 27.5 29.5 31.5 33.5 35.5 37.5 39.5 41.5 43.5 45.5 47.5 49.5 actual head current is defined by the following equation: i head = i w /(1 + r h /r d ) r h : head resistance r d : damping resistance
13 CXA3541N electrical characteristics measurement circuit 25 ? 150nh 25 ? 1 f 3300 h s6 s7 vpsrr v wdx 1 f 0.1 f 3300 h vpsrr' v ee s6' 150nh 0.1 f v wdy 1000pf 1000pf 1000pf v r/xw v se v cc v v bpf 100khz to 50mhz s/i vm2 25 ? 25 ? 7.5k ? 1k ? amp2 gain = 100 s7' r13 1.5k r14 1.5k vm1 amp1 gain = 1 rdx flt/se/bhv r/xw sden v ee rdy gnd sclk sdata 5 wdy wdx v cc r0y r0x w0y w0x w1y w1x r1x r1y 15 nc 14 cap 13 16 17 18 19 20 21 22 nc 23 rs 24 12 11 10 9 8 7 6 2 1 3 4 2.4k 10 f
14 CXA3541N application circuit 0.1 f 3v rdx flt/se/bhv r/xw sden v ee rdy gnd sclk sdata 5 wdy wdx v cc r0y r0x w0y w0x w1y w1x r1x r1y 15 nc 14 cap 13 16 17 18 19 20 21 22 nc 23 rs 24 12 11 10 9 8 7 6 2 1 3 4 0.1 f 5v 0.1 f 7.5k ? application circuits shown are typical examples illustrating the operation of the devices. sony cannot assume responsibility fo r any problems arising out of the use of these circuits or for any infringement of third party patent and other right due to same .
15 CXA3541N 25.0 50.0 75.0 1.00 0.98 0.96 0.94 1.02 1.04 1.06 25.0 0.0 normalized read amplifier voltage gain vs. ambient temperature ta ambient temperature [ c] a v /a v (ta = 25 c) v cc = 5v v ee = 3v r mr = 50 ? ibn = "100" high gain normalized bias current vs. ambient temperature ta ambient temperature [ c] i b /i b (ta = 25 c) 25.0 50.0 75.0 25.0 0.96 0.98 1.00 1.02 1.04 0.0 v cc = 5v v ee = 3v r mr = 50 ? ibn = "100" 0.96 1.00 0.98 1.02 1.04 normalized read amplifier voltage gain vs. power supply voltage v cc [v] a v /a v (v cc = 5v) v ee = 3v r mr = 50 ? ibn = "100" high gain ta = 25 c normalized bias current vs. power supply voltage v cc [v] i b /i b (v cc = 5v) 5.0 4.0 0.96 1.00 0.98 1.02 1.04 6.0 5.5 4.5 3.5 6.5 5.0 4.0 6.0 5.5 4.5 3.5 6.5 v ee = 3v r mr = 50 ? ibn = "100" ta = 25 c 35 40 45 50 55 15 20 25 30 14 16 10 8 6 4 2 0 12 bank write current vs. current accuracy bank write current [ma] deviation of bank write current is within 7% at basis of the chart. bank write current accuracy [%] v cc = 5v ta = 25 c r h = 0 ? read 170 s write 30 s with write data
16 CXA3541N 5.0 4.0 6.0 6.5 4.5 3.5 5.5 0.96 0.98 1.00 1.02 1.04 normalized write current vs. power supply voltage v cc [v] i w /i w (v cc = 5v) v ee = 3v iwn = "0101" ta = 25 c normalized write current vs. ambient temperature ta ambient temperature [ c] i w /i w (ta = 25 c) 25.0 50.0 75.0 25.0 0.94 0.98 1.00 1.02 1.04 0.0 0.96 v cc = 5v v ee = 3v iwn = "0101" power supply on/off detector threshold voltage [v] 25.0 0.0 25.0 50.0 3.85 3.95 3.90 4.00 4.05 4.10 4.15 75.0 power supply on/off detector threshold voltage vs. ambient temperature ta ambient temperature [ c] on off off on input refered noise voltage vs. ambient temperature ta ambient temperature [ c] e n [nv/ hz] 25.0 50.0 75.0 25.0 0.70 0.72 0.76 0.74 0.80 0.78 0.82 0.0 v cc = 5v v ee = 3v r mr = 50 ? ibn = "100"
17 CXA3541N sony code eiaj code jedec code ssop-24p-l01 p-ssop24-7.8x5.6-0.65 package material lead treatment lead material package mass epoxy resin palladium plating copper alloy package structure 0.1g 24pin ssop (plastic) 0.1 0.1 0? to 10? 0.5 0.2 detail a ? 5.6 0.1 24 ? 7.8 0.1 13 0.65 12 1 7.6 0.2 0.1 1.25 ?0.1 + 0.2 a 0.13 m note: dimension " ? " does not include mold protrusion. 0.15 ?0.01 detail b : palladium + 0.03 b=0.22 0.03 b b package outline unit: mm sony corporation

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